Результат пошуку "APT10026" : 28
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT10026JN | APT |
на замовлення 100 шт: термін постачання 14-28 дні (днів) |
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APT10026L2FLL |
на замовлення 8639 шт: термін постачання 14-28 дні (днів) |
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APT10026L2LL |
на замовлення 8639 шт: термін постачання 14-28 дні (днів) |
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APT10026JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.28Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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APT10026JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.28Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT10026JFLL | Microchip Technology | Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube |
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APT10026JFLL | Microchip Technology | Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube |
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APT10026JFLL | Microchip Technology | Discrete Semiconductor Modules FREDFET MOS7 1000 V 26 Ohm SOT-227 |
товар відсутній |
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APT10026JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.26Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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APT10026JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.26Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT10026JLL | Microchip Technology | Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube |
товар відсутній |
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APT10026JLL | Microchip Technology | Discrete Semiconductor Modules MOSFET MOS7 1000 V 26 Ohm SOT-227 |
товар відсутній |
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APT10026JN | Microchip Technology | Trans MOSFET N-CH 1KV 33A 4-Pin SOT-227 |
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APT10026L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 38A Pulsed drain current: 152A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 267nC Kind of channel: enhanced |
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APT10026L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 38A Pulsed drain current: 152A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 267nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10026L2FLLG | Microchip Technology | Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube |
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APT10026L2FLLG | Microchip Technology | Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube |
товар відсутній |
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APT10026L2FLLG | Microchip Technology | Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube |
товар відсутній |
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APT10026L2FLLG | Microchip Technology | MOSFET FREDFET MOS7 1000 V 26 Ohm TO-264 MAX |
товар відсутній |
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APT10026L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 38A Pulsed drain current: 152A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 267nC Kind of channel: enhanced |
товар відсутній |
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APT10026L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 38A Pulsed drain current: 152A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 267nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10026L2LLG | Microchip Technology | Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube |
товар відсутній |
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APT10026L2LLG | Microchip Technology | MOSFET MOSFET MOS7 1000 V 26 Ohm TO-264 MAX |
товар відсутній |
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APT10026L2FLLG | MICROSEMI | кількість в упаковці: 1 шт |
товар відсутній |
APT10026JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
APT10026JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
APT10026JFLL |
Виробник: Microchip Technology
Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube
товар відсутній
APT10026JFLL |
Виробник: Microchip Technology
Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube
товар відсутній
APT10026JFLL |
Виробник: Microchip Technology
Discrete Semiconductor Modules FREDFET MOS7 1000 V 26 Ohm SOT-227
Discrete Semiconductor Modules FREDFET MOS7 1000 V 26 Ohm SOT-227
товар відсутній
APT10026JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
APT10026JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
APT10026JLL |
Виробник: Microchip Technology
Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227 Tube
товар відсутній
APT10026JLL |
Виробник: Microchip Technology
Discrete Semiconductor Modules MOSFET MOS7 1000 V 26 Ohm SOT-227
Discrete Semiconductor Modules MOSFET MOS7 1000 V 26 Ohm SOT-227
товар відсутній
APT10026L2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 152A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 267nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 152A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 267nC
Kind of channel: enhanced
товар відсутній
APT10026L2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 152A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 267nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 152A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 267nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
APT10026L2FLLG |
Виробник: Microchip Technology
Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube
Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube
товар відсутній
APT10026L2FLLG |
Виробник: Microchip Technology
Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube
Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube
товар відсутній
APT10026L2FLLG |
Виробник: Microchip Technology
Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube
Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube
товар відсутній
APT10026L2FLLG |
Виробник: Microchip Technology
MOSFET FREDFET MOS7 1000 V 26 Ohm TO-264 MAX
MOSFET FREDFET MOS7 1000 V 26 Ohm TO-264 MAX
товар відсутній
APT10026L2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 152A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 267nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 152A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 267nC
Kind of channel: enhanced
товар відсутній
APT10026L2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 152A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 267nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 152A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 267nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
APT10026L2LLG |
Виробник: Microchip Technology
Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube
Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX Tube
товар відсутній
APT10026L2LLG |
Виробник: Microchip Technology
MOSFET MOSFET MOS7 1000 V 26 Ohm TO-264 MAX
MOSFET MOSFET MOS7 1000 V 26 Ohm TO-264 MAX
товар відсутній