Продукція > IHY
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|
| IHY15N120R3XKSA1 | Infineon Technologies | Description: IGBT 1200V 30A 254W TO247HC-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Supplier Device Package: PG-TO247HC-3 IGBT Type: Trench Td (on/off) @ 25°C: -/300ns Switching Energy: 700µJ (off) Test Condition: 600V, 15A, 14.6Ohm, 15V Gate Charge: 165 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 254 W | товар відсутній | |||
| IHY20N120R3 | Infineon Technologies | IGBT Transistors Reverse Conducting IGBT Monolithic Body | товар відсутній | |||
| IHY20N120R3XKSA1 | Infineon Technologies | Description: IGBT 1200V 40A 310W TO247HC-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Supplier Device Package: PG-TO247HC-3 IGBT Type: Trench Td (on/off) @ 25°C: -/387ns Switching Energy: 950µJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 211 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 310 W | товар відсутній | |||
| IHY20N135R3 | Infineon Technologies | IGBT Transistors Reverse Conducting IGBT Monolithic Body | товар відсутній | |||
| IHY20N135R3XKSA1 | Infineon Technologies | Description: IGBT 1350V 40A 310W TO247HC-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Supplier Device Package: PG-TO247HC-3 IGBT Type: Trench Td (on/off) @ 25°C: -/335ns Switching Energy: 1.3mJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 195 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 60 A Power - Max: 310 W | товар відсутній | |||
| IHY30N160R2 | Infineon Technologies | Trans IGBT Chip N-CH 1600V 60A 312000mW 3-Pin(3+Tab) TO-247HC | товар відсутній | |||
| IHY30N160R2 | Infineon Technologies | IGBT Transistors Reverse Conducting IGBT Monolithic Body | товар відсутній | |||
| IHY30N160R2XK | Infineon Technologies | Description: IGBT, N-CHANNEL Packaging: Bulk | на замовлення 248 шт: термін постачання 21-31 дні (днів) |
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| IHY30N160R2XKSA1 | Infineon Technologies | Description: IGBT 1600V 30A 312W TO247HC-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: PG-TO247HC-3 IGBT Type: NPT Td (on/off) @ 25°C: -/525ns Switching Energy: 2.53mJ Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 312 W | товар відсутній |