Продукція > IXK

НазваВиробникІнформаціяДоступністьЦіна без ПДВ
IXK611P1IXYSDescription: IC DRIVER HALF BRIDGE GATE 8DIP
товар відсутній
IXK611S1IXYSDescription: IC DRIVER HALF BRIDGE GATE 8SOIC
товар відсутній
IXK611S1T/RIXYSDescription: IC DRIVER HALF BRIDGE GATE 8SOIC
товар відсутній
IXKC13N80CIXYSMOSFET 13 Amps 800V 0.29 Rds
товар відсутній
IXKC13N80CIXYSDescription: MOSFET N-CH 800V 13A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
товар відсутній
IXKC13N80CLittelfuseTrans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) ISOPLUS 220
товар відсутній
IXKC15N60C5IXYSDescription: MOSFET N-CH 600V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: ISOPLUS220™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
IXKC15N60C5IXYSMOSFET 15 Amps 600V 0.165 Rds
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
IXKC15N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
товар відсутній
IXKC15N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
товар відсутній
IXKC19N60C5IXYSMOSFET 19 Amps 600V 0.125 Rds
товар відсутній
IXKC19N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 430ns
товар відсутній
IXKC19N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXKC19N60C5IXYSDescription: MOSFET N-CH 600V 19A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: ISOPLUS220™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
товар відсутній
IXKC20N60CLittelfuseTrans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) ISOPLUS 220
товар відсутній
IXKC20N60CIXYSDescription: MOSFET N-CH 600V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: ISOPLUS220™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
IXKC20N60CIXYSMOSFET 14 Amps 600V 0.19 Rds
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+838.21 грн
10+ 712.4 грн
IXKC23N60C5IXYSDescription: MOSFET N-CH 600V 23A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
товар відсутній
IXKC23N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
IXKC23N60C5IXYSMOSFET 23 Amps 600V 0.1 Rds
товар відсутній
IXKC23N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXKC25N80CLittelfuseTrans MOSFET N-CH Si 800V 25A 3-Pin(3+Tab) ISOPLUS 220
товар відсутній
IXKC25N80CIXYSMOSFET 25 Amps 800V 0.15 Rds
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
IXKC25N80CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 550ns
товар відсутній
IXKC25N80CIXYSDescription: MOSFET N-CH 800V 25A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
товар відсутній
IXKC25N80CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 550ns
кількість в упаковці: 1 шт
товар відсутній
IXKC40N60CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 800ns
товар відсутній
IXKC40N60CIXYSDescription: MOSFET N-CH 600V 28A ISOPLUS220
товар відсутній
IXKC40N60CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 800ns
кількість в упаковці: 1 шт
товар відсутній
IXKC40N60CLittelfuseTrans MOSFET N-CH Si 600V 28A 3-Pin(3+Tab) ISOPLUS 220
товар відсутній
IXKC40N60CIXYSMOSFET 28 Amps 600V 0.1 Rds
товар відсутній
IXKF 40N60 SCH1IXYSMOSFET
товар відсутній
IXKF40N60SCD1LittelfuseTrans MOSFET N-CH 600V 41A 5-Pin(5+Tab) ISOPLUS I4-PAC
товар відсутній
IXKF40N60SCD1IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXKF40N60SCD1IXYSMOSFET 40 Amps 600V
товар відсутній
IXKF40N60SCD1IXYSDescription: MOSFET N-CH 600V 38A I4-PAC-5
товар відсутній
IXKF40N60SCD1IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
IXKG25N80CIXYSDescription: MOSFET N-CH 800V 25A ISO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISO264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
товар відсутній
IXKH20N60C5IXYSDescription: MOSFET N-CH 600V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IXKH20N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
на замовлення 246 шт:
термін постачання 21-30 дні (днів)
1+441.22 грн
3+ 294.31 грн
8+ 277.92 грн
IXKH20N60C5IXYSMOSFET 20 Amps 600V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
IXKH20N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
на замовлення 246 шт:
термін постачання 7-14 дні (днів)
1+529.47 грн
3+ 366.75 грн
8+ 333.5 грн
IXKH20N60C5LittelfuseTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247AD
товар відсутній
IXKH24N60C5IXYSMOSFET 24 Amps 600V
товар відсутній
IXKH24N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO247-3
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
IXKH24N60C5IXYSDescription: MOSFET N-CH 600V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
IXKH24N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO247-3
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXKH30N60C5IXYSDescription: MOSFET N-CH 600V 30A TO247AD
товар відсутній
IXKH30N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 310W
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXKH30N60C5IXYSMOSFET 30 Amps 600V
товар відсутній
IXKH30N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 310W
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
IXKH35N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXKH35N60C5IXYSMOSFET 35 Amps 600V
товар відсутній
IXKH35N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
IXKH35N60C5LittelfuseTrans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247AD
товар відсутній
IXKH35N60C5IXYSDescription: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
1+747.4 грн
30+ 582.6 грн
IXKH47N60CLittelfuseTrans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247
товар відсутній
IXKH47N60CIXYSDescription: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
на замовлення 1110 шт:
термін постачання 21-31 дні (днів)
1+1603.3 грн
10+ 1372.25 грн
100+ 1200.22 грн
500+ 961.17 грн
IXKH47N60CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXKH47N60CIXYSMOSFET 47 Amps 600V 70 Rds
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
1+1742.19 грн
10+ 1526.57 грн
30+ 1238.3 грн
60+ 1198.31 грн
120+ 1160.29 грн
270+ 1082.94 грн
510+ 995.1 грн
IXKH47N60CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
IXKH47N60CC3IXYSDescription: MOSFET N-CH 600V 47A TO247AD
Packaging: Bulk
товар відсутній
IXKH70N60C5LittelfuseTrans MOSFET N-CH 600V 70A 3-Pin(3+Tab) TO-247AD
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
1+2804.29 грн
10+ 2630.67 грн
25+ 2494.26 грн
50+ 2282.41 грн
100+ 1979.74 грн
IXKH70N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Mounting: THT
Features of semiconductor devices: super junction coolmos
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 45mΩ
Power dissipation: 625W
Gate charge: 150nC
Polarisation: unipolar
товар відсутній
IXKH70N60C5IXYSMOSFET 70 Amps 600V
на замовлення 270 шт:
термін постачання 21-30 дні (днів)
1+1653.47 грн
10+ 1448.17 грн
30+ 1113.75 грн
60+ 1090.15 грн
120+ 1066.55 грн
270+ 1014.76 грн
IXKH70N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Mounting: THT
Features of semiconductor devices: super junction coolmos
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 45mΩ
Power dissipation: 625W
Gate charge: 150nC
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXKH70N60C5LittelfuseTrans MOSFET N-CH 600V 70A 3-Pin(3+Tab) TO-247AD
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
4+3020 грн
10+ 2833.03 грн
25+ 2686.13 грн
50+ 2457.98 грн
100+ 2132.02 грн
Мінімальне замовлення: 4
IXKH70N60C5LittelfuseTrans MOSFET N-CH 600V 70A 3-Pin(3+Tab) TO-247AD
товар відсутній
IXKH70N60C5IXYSDescription: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
на замовлення 301 шт:
термін постачання 21-31 дні (днів)
1+1503.31 грн
10+ 1286.07 грн
100+ 1124.84 грн
IXKH70N60C5LittelfuseTrans MOSFET N-CH 600V 70A 3-Pin(3+Tab) TO-247AD
товар відсутній
IXKK85N60CIXYSMOSFET 85 Amps 600V 36 Rds
товар відсутній
IXKK85N60CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
IXKK85N60CLittelfuseTrans MOSFET N-CH 600V 85A 3-Pin(3+Tab) TO-264
товар відсутній
IXKK85N60CIXYSDescription: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
на замовлення 269 шт:
термін постачання 21-31 дні (днів)
1+3067.61 грн
25+ 2475.56 грн
100+ 2310.54 грн
IXKK85N60CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXKK85N60CC3IXYSDescription: MOSFET N-CH 600V 85A TO264A
Packaging: Bulk
товар відсутній
IXKN40N60CIXYSDescription: MOSFET N-CH 600V 40A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
товар відсутній
IXKN40N60CIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXKN40N60CIXYSDiscrete Semiconductor Modules 40 Amps 600V
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2821.3 грн
10+ 2421.4 грн
20+ 1964.63 грн
50+ 1899.73 грн
100+ 1781.08 грн
200+ 1720.12 грн
500+ 1660.46 грн
IXKN40N60CIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXKN40N60CLittelfuseTrans MOSFET N-CH 600V 40A 4-Pin SOT-227B
товар відсутній
IXKN45N80CIXYSDescription: MOSFET N-CH 800V 44A SOT-227B
товар відсутній
IXKN45N80CIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 800ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXKN45N80CIXYSDiscrete Semiconductor Modules 45 Amps 800V
на замовлення 10 шт:
термін постачання 1287-1296 дні (днів)
1+3673.27 грн
10+ 3404.44 грн
20+ 2902.7 грн
50+ 2789.94 грн
100+ 2734.88 грн
IXKN45N80CIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 800ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXKN45N80CLittelfuseTrans MOSFET N-CH 800V 44A 4-Pin SOT-227B
товар відсутній
IXKN45N80CLittelfuseTrans MOSFET N-CH 800V 44A 4-Pin SOT-227B
товар відсутній
IXKN75N60CLittelfuseTrans MOSFET N-CH 600V 75A 4-Pin SOT-227B
товар відсутній
IXKN75N60CLittelfuseTrans MOSFET N-CH 600V 75A 4-Pin SOT-227B
товар відсутній
IXKN75N60CIXYSDescription: MOSFET N-CH 600V 75A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
на замовлення 614 шт:
термін постачання 21-31 дні (днів)
1+4410.66 грн
10+ 3849.13 грн
100+ 3450.96 грн
IXKN75N60CIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 580ns
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 36mΩ
Power dissipation: 560W
Polarisation: unipolar
Type of module: MOSFET transistor
Gate charge: 500nC
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Case: SOT227B
товар відсутній
IXKN75N60C
Код товару: 116581		Транзистори > Польові N-канальні
товар відсутній
IXKN75N60CIXYSDiscrete Semiconductor Modules 75 Amps 600V
на замовлення 140 шт:
термін постачання 1065-1074 дні (днів)
1+4836.51 грн
20+ 4673.94 грн
50+ 3906.31 грн
100+ 3829.62 грн
IXKN75N60CIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 580ns
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 36mΩ
Power dissipation: 560W
Polarisation: unipolar
Type of module: MOSFET transistor
Gate charge: 500nC
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Case: SOT227B
кількість в упаковці: 1 шт
товар відсутній
IXKN75N60CLittelfuseTrans MOSFET N-CH 600V 75A 4-Pin SOT-227B
товар відсутній
IXKP10N60C5IXYSDescription: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
товар відсутній
IXKP10N60C5MIXYSMOSFET 10 Amps 600V
товар відсутній
IXKP10N60C5MIXYSDescription: MOSFET N-CH 600V 5.4A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: TO-220ABFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
товар відсутній
IXKP13N60C5IXYSMOSFET 13 Amps 600V
товар відсутній
IXKP13N60C5IXYSDescription: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IXKP13N60C5MIXYSDescription: MOSFET N-CH 600V 6.5A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: TO-220ABFP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IXKP20N60C5IXYS06+
на замовлення 5000 шт:
термін постачання 14-28 дні (днів)
IXKP20N60C5IXYSDescription: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IXKP20N60C5MIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 340ns
кількість в упаковці: 1 шт
товар відсутній
IXKP20N60C5MIXYSDescription: MOSFET N-CH 600V 7.6A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220ABFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IXKP20N60C5MIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 340ns
товар відсутній
IXKP20N60C5MIXYSMOSFET 20 Amps 600V
товар відсутній
IXKP24N60C5IXYSMOSFET 24 Amps 600V
товар відсутній
IXKP24N60C5LittelfuseTrans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-220AB
товар відсутній
IXKP24N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
IXKP24N60C5IXYSDescription: MOSFET N-CH 600V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
IXKP24N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXKP24N60C5MIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
товар відсутній
IXKP24N60C5MIXYSDescription: MOSFET N-CH 600V 8.5A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: TO-220ABFP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
IXKP24N60C5MIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
товар відсутній
IXKP24N60C5MIXYSMOSFET 24 Amps 600V
товар відсутній
IXKP35N60C5IXYSDescription: MOSFET N-CH 600V 35A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
товар відсутній
IXKP35N60C5IXYSMOSFET 35 Amps 600V
товар відсутній
IXKR25N80CIXYSMOSFET 25 Amps 800V
на замовлення 55 шт:
термін постачання 1414-1423 дні (днів)
1+1791.13 грн
10+ 1568.03 грн
30+ 1272.39 грн
60+ 1232.4 грн
IXKR25N80CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXKR25N80CLittelfuseTrans MOSFET N-CH 800V 25A 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
IXKR25N80CIXYSDescription: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
товар відсутній
IXKR25N80CIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXKR25N80C - Leistungs-MOSFET, n-Kanal, 800 V, 25 A, 0.15 ohm, ISOPLUS-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 800
Dauer-Drainstrom Id: 25
Qualifikation: -
Verlustleistung Pd: 250
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 250
Bauform - Transistor: ISOPLUS-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.15
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.15
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXKR25N80CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXKR40N60CLittelfuseTrans MOSFET N-CH 600V 38A 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
IXKR40N60CIXYSDescription: MOSFET N-CH 600V 38A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
товар відсутній
IXKR40N60CIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXKR40N60C - Leistungs-MOSFET, n-Kanal, 600 V, 38 A, 0.07 ohm, ISOPLUS-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600
Dauer-Drainstrom Id: 38
Qualifikation: -
Verlustleistung Pd: 280
Gate-Source-Schwellenspannung, max.: 3.9
Verlustleistung: 280
Bauform - Transistor: ISOPLUS-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.07
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.07
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXKR40N60C
Код товару: 178634		Різні комплектуючі > Різні комплектуючі 1
товар відсутній
IXKR40N60CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 280W
Case: ISOPLUS247™
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Reverse recovery time: 650ns
кількість в упаковці: 1 шт
товар відсутній
IXKR40N60CIXYSMOSFET 40 Amps 600V
на замовлення 86 шт:
термін постачання 21-30 дні (днів)
1+1807.19 грн
10+ 1583.11 грн
30+ 1284.84 грн
60+ 1243.54 грн
120+ 1239.61 грн
IXKR40N60CIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 280W
Case: ISOPLUS247™
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Reverse recovery time: 650ns
товар відсутній
IXKR40N60CLittelfuseTrans MOSFET N-CH 600V 38A 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
IXKR47N60C5Ixys Semiconductor GmbH
на замовлення 10 шт:
термін постачання 5 дні (днів)
IXKR47N60C5IXYSMOSFET 47 Amps 600V 0.045 Rds
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1750.6 грн
10+ 1533.35 грн
30+ 1244.2 грн
60+ 1141.28 грн
120+ 1121.62 грн
270+ 1104.57 грн
IXKR47N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+1281.02 грн
2+ 1124.65 грн
IXKR47N60C5LittelfuseTrans MOSFET N-CH Si 600V 47A 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
IXKR47N60C5IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 7-14 дні (днів)
1+1537.22 грн
2+ 1401.48 грн
IXKR47N60C5IXYSDescription: MOSFET N-CH 600V 47A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
1+1611.1 грн
30+ 1286.5 грн
IXKT70N60C5IXYSIXKT70N60C5 SMD N channel transistors
товар відсутній
IXKT70N60C5IXYSMOSFET 70 Amps 600V
товар відсутній
IXKT70N60C5-TRLLittelfuseTrans MOSFET N-CH 600V 66A 3-Pin(2+Tab) TO-268AA T/R
товар відсутній
IXKT70N60C5-TRLIXYSMOSFET 70 Amps 600V
товар відсутній
IXKT70N60C5-TRLIXYSDescription: MOSFET P-CH 600V 68A TO-268
товар відсутній
IXKT70N60C5-TRLLittelfuseTrans MOSFET N-CH 600V 66A 3-Pin(2+Tab) TO-268AA T/R
товар відсутній
IXKT70N60C5-TUBLittelfuseTrans MOSFET N-CH 600V 66A 3-Pin(2+Tab) TO-268AA Tube
товар відсутній
IXKT70N60C5-TUBIXYSMOSFET MSFT N-CH SUPR JUNC C3-3&44
товар відсутній
IXKT70N60C5-TUBIXYSDescription: MOSFET N-CH 600V 68A TO268
товар відсутній
IXKU5-505MINIPACK2IXYSDescription: MOSFET MINIPACK-2
товар відсутній