НазваВиробникІнформаціяДоступністьЦіна без ПДВ
LGB07+
на замовлення 86 шт:
термін постачання 14-28 дні (днів)
LGB00000Red Lion ControlsDescription: COUNTER LCD 8 CHAR 115/230V PNL
товар відсутній
LGB00100Red Lion ControlsDescription: COUNTER LCD 8 CHAR 115/230V PNL
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LGB15N41ATILITTELFUSELGB15N41ATI SMD IGBT transistors
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LGB18N40ATHLittelfuse Inc.Description: IGBT 430V 18A 115W D2PAK3
Packaging: Tape & Reel (TR)
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LGB18N40ATHLittelfuseLittelfuse D2PAK, IGBT3
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LGB18N40ATHLITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 18A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 18A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±18V
Pulsed collector current: 50A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: automotive industry; ignition systems
товар відсутній
LGB8202ARILITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: automotive industry; ignition systems
кількість в упаковці: 1 шт
товар відсутній
LGB8202ARILITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: automotive industry; ignition systems
товар відсутній
LGB8202ATILittelfuse Inc.Description: IGBT 440V 20A 150W D2PAK
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LGB8204ATHIXYSDescription: D2PAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 115 W
товар відсутній
LGB8204ATILittelfuse Inc.Description: IGBT 430V 18A 115W D2PAK3
товар відсутній
LGB8206ARILITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 20A; D2PAK
Mounting: SMD
Application: automotive industry; ignition systems
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Case: D2PAK
Collector-emitter voltage: 390V
Collector current: 20A
Type of transistor: IGBT
товар відсутній
LGB8206ARILittelfuse Inc.Description: IGBT 390V 20A 150W D2PAK3
Packaging: Tape & Reel (TR)
товар відсутній
LGB8206ARILITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 20A; D2PAK
Mounting: SMD
Application: automotive industry; ignition systems
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Case: D2PAK
Collector-emitter voltage: 390V
Collector current: 20A
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
LGB8206ATILittelfuse Inc.Description: IGBT 390V 20A 150W D2PAK3
Packaging: Tape & Reel (TR)
товар відсутній
LGB8206ATILITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 20A; D2PAK
Mounting: SMD
Application: automotive industry; ignition systems
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Case: D2PAK
Collector-emitter voltage: 390V
Collector current: 20A
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
LGB8206ATILITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 20A; D2PAK
Mounting: SMD
Application: automotive industry; ignition systems
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Case: D2PAK
Collector-emitter voltage: 390V
Collector current: 20A
Type of transistor: IGBT
товар відсутній
LGB8207ATHLITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK
Mounting: SMD
Application: automotive industry; ignition systems
Case: D2PAK
Power dissipation: 165W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Collector-emitter voltage: 365V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
товар відсутній
LGB8207ATHLITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK
Mounting: SMD
Application: automotive industry; ignition systems
Case: D2PAK
Power dissipation: 165W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Collector-emitter voltage: 365V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
LGB8207BTHLittelfuse Inc.Description: IGBT 365V 20A 165W D2PAK3
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LGB8207THLittelfuse Inc.Description: IGBT 365V 20A 165W D2PAK3
товар відсутній
LGB8207THLITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; ignition systems
Mounting: SMD
Application: ignition systems
Case: D2PAK
Power dissipation: 165W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Collector-emitter voltage: 365V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
LGB8207THLITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; ignition systems
Mounting: SMD
Application: ignition systems
Case: D2PAK
Power dissipation: 165W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Collector-emitter voltage: 365V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
товар відсутній
LGB8245TILittelfuseLittelfuse D2PAK, IGBT4
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LGB8245TILittelfuse450V, 20A N-Channel Ignition IGBT
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LGB8245TILITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 20A; 150W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 20A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±15V
Pulsed collector current: 50A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
товар відсутній
LGB8245TILittelfuse450V, 20A N-Channel Ignition IGBT
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LGB8245TILittelfuse Inc.Description: IGBT 490V 20A 150W D2PAK3
товар відсутній