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Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD100N04-AU_L2_000A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD100N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD100N04_L2_00001

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD100N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD100N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD100P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V

товар відсутній

PJD100P03_L2_00001

MOSFET 30V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD100P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V

товар відсутній

PJD10N10-L2-00001

MOSFET

товар відсутній

PJD10N10_L2_00001

Description: 100V N-CHANNEL MOSFET

товар відсутній

PJD10N10_L2_00001

MOSFET 100V N-Channel MOSFET

товар відсутній

PJD10N10_L2_00001

Description: 100V N-CHANNEL MOSFET

товар відсутній

PJD10P10A-L2-00001

MOSFET

товар відсутній

PJD10P10A_L2_00001

MOSFET 100V P-Channel MOSFET

товар відсутній

PJD10P10A_L2_00001

Description: 100V P-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1419 pF @ 25 V

товар відсутній

PJD11N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101

товар відсутній

PJD11N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

на замовлення 2980 шт:

термін постачання 21-30 дні (днів)

9+	37.6 грн
10+	31.86 грн
100+	20.71 грн
500+	16.32 грн
1000+	12.92 грн
3000+	10.99 грн
9000+	9.92 грн

Мінімальне замовлення: 9

PJD11N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101

на замовлення 2995 шт:

термін постачання 21-31 дні (днів)

9+	34.58 грн
10+	28.58 грн
100+	19.85 грн
500+	14.54 грн
1000+	11.82 грн

Мінімальне замовлення: 9

PJD11N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD11N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD12P06-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD12P06-AU_L2_000A1

MOSFET PJ/D12P06/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-60SMP//PJ/TO252-ASD9/PJx12P06-ASE9/TO252-AS02

товар відсутній

PJD12P06-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD12P06_L2_00001

MOSFET PJ/D12P06/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-60SMP//PJ/TO252-ASC8/PJx12P06-ASE9/TO252-AS02

товар відсутній

PJD13N10A-L2-00001

MOSFET TO-252AA/MOS/TO/NFET-100SMN

товар відсутній

PJD13N10A_L2_00001

MOSFET 100V N-Channel MOSFET

товар відсутній

PJD13N10A_L2_00001

Description: 100V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V

на замовлення 4928 шт:

термін постачання 21-31 дні (днів)

9+	33.14 грн
11+	27.68 грн
100+	19.24 грн
500+	14.1 грн
1000+	11.46 грн

Мінімальне замовлення: 9

PJD13N10A_L2_00001

Description: 100V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	11.34 грн

Мінімальне замовлення: 3000

PJD14P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V

на замовлення 2980 шт:

термін постачання 21-31 дні (днів)

7+	43.22 грн
10+	36.42 грн
100+	27.93 грн
500+	20.72 грн
1000+	16.58 грн

Мінімальне замовлення: 7

PJD14P06A-AU_L2_000A1

MOSFET 60V P-Channel Enhancement Mode MOSFET

на замовлення 2950 шт:

термін постачання 21-30 дні (днів)

7+	46.77 грн
10+	40.28 грн
100+	26.9 грн
500+	21.31 грн
1000+	17.71 грн
3000+	14.98 грн
9000+	13.78 грн

Мінімальне замовлення: 7

PJD14P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V

товар відсутній

PJD14P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V

товар відсутній

PJD14P06A_L2_00001

MOSFET 60V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD14P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V

на замовлення 2987 шт:

термін постачання 21-31 дні (днів)

7+	42.5 грн
10+	35.1 грн
100+	26.17 грн
500+	19.29 грн
1000+	14.91 грн

Мінімальне замовлення: 7

PJD15P06A-AU_L2_000A1

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced

товар відсутній

PJD15P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V

на замовлення 30000 шт:

термін постачання 21-31 дні (днів)

3000+	15.54 грн
6000+	14.17 грн
9000+	13.12 грн
30000+	12.2 грн

Мінімальне замовлення: 3000

PJD15P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V

на замовлення 30526 шт:

термін постачання 21-31 дні (днів)

8+	41.06 грн
10+	34.13 грн
100+	23.63 грн
500+	18.52 грн
1000+	15.77 грн

Мінімальне замовлення: 8

PJD15P06A-AU_L2_000A1

MOSFET 60V P-Channel Enhancement Mode MOSFET

на замовлення 1793 шт:

термін постачання 21-30 дні (днів)

7+	45.29 грн
10+	39.44 грн
100+	26.3 грн
500+	20.78 грн
1000+	17.25 грн
3000+	14.65 грн
9000+	13.45 грн

Мінімальне замовлення: 7

PJD15P06A-AU_L2_000A1

товар відсутній

PJD15P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V

на замовлення 28927 шт:

термін постачання 21-31 дні (днів)

8+	40.34 грн
10+	33.23 грн
100+	23.08 грн
500+	16.91 грн
1000+	13.74 грн

Мінімальне замовлення: 8

PJD15P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V

на замовлення 27000 шт:

термін постачання 21-31 дні (днів)

3000+	13.59 грн
6000+	12.43 грн
9000+	11.54 грн

Мінімальне замовлення: 3000

PJD15P06A_L2_00001

MOSFET 60V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

7+	46.77 грн
10+	39.29 грн
100+	25.57 грн
500+	20.11 грн
1000+	15.98 грн
3000+	13.52 грн
6000+	13.19 грн

Мінімальне замовлення: 7

PJD16N06A-AU-L2

MOSFET

товар відсутній

PJD16N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Qualification: AEC-Q101

товар відсутній

PJD16N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Qualification: AEC-Q101

товар відсутній

PJD16N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD16N06A-L2-00001

MOSFET

товар відсутній

PJD16N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V

товар відсутній

PJD16N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V

товар відсутній

PJD16N06A_L2_00001

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD16N08A-L2-00001

MOSFET

товар відсутній

PJD16P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V

на замовлення 5999 шт:

термін постачання 21-31 дні (днів)

6+	48.26 грн
10+	40.58 грн
100+	31.11 грн
500+	23.08 грн
1000+	18.46 грн

Мінімальне замовлення: 6

PJD16P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	18.52 грн

Мінімальне замовлення: 3000

PJD16P06A-L2-00001

MOSFET

товар відсутній

PJD16P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V

товар відсутній

PJD16P06A_L2_00001

PJD16P06A-L2 SMD P channel transistors

товар відсутній

PJD16P06A_L2_00001

MOSFET 60V P-Channel Enhancement Mode MOSFET

на замовлення 19601 шт:

термін постачання 21-30 дні (днів)

8+	42.65 грн
10+	36.76 грн
100+	21.78 грн
500+	18.18 грн
1000+	15.98 грн
3000+	13.52 грн
6000+	12.99 грн

Мінімальне замовлення: 8

PJD16P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V

товар відсутній

PJD18N20-L2-00001

MOSFET TO-252AA/MOS/TO/NFET-200SMN

товар відсутній

PJD18N20_L2_00001

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 24nC
кількість в упаковці: 1 шт

товар відсутній

PJD18N20_L2_00001

Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V

на замовлення 9000 шт:

термін постачання 21-31 дні (днів)

3000+	23.26 грн
6000+	21.22 грн
9000+	19.65 грн

Мінімальне замовлення: 3000

PJD18N20_L2_00001

товар відсутній

PJD18N20_L2_00001

MOSFET 200V N-Channel Enhancement Mode MOSFET

на замовлення 10816 шт:

термін постачання 21-30 дні (днів)

5+	66.5 грн
10+	57.67 грн
100+	34.23 грн
500+	28.64 грн
1000+	25.04 грн
3000+	21.24 грн
6000+	20.44 грн

Мінімальне замовлення: 5

PJD18N20_L2_00001

Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V

на замовлення 11695 шт:

термін постачання 21-31 дні (днів)

5+	61.23 грн
10+	51.12 грн
100+	35.37 грн
500+	27.74 грн
1000+	23.61 грн

Мінімальне замовлення: 5

PJD1NA50_L2_00001

MOSFET 500V N-Channel MOSFET

товар відсутній

PJD1NA60B_L2_00001

MOSFET PJ/D1NA60B/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-600SMN//PJ/TO252-ASA2/PJx1NA60B-AS29/TO252-AS02

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

PJD1NA60_L2_00001

ESD Suppressors / TVS Diodes TVS ESD SOD-123S 60V 96.8V

товар відсутній

PJD25N03-L2-00001

MOSFET TO-252AA/MOS/TO/NFET-30SMN

товар відсутній

PJD25N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V

на замовлення 6487 шт:

термін постачання 21-31 дні (днів)

11+	27.37 грн
13+	22.68 грн
100+	15.75 грн
500+	11.54 грн
1000+	9.38 грн

Мінімальне замовлення: 11

PJD25N03_L2_00001

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

7+	53.94 грн
16+	22.48 грн
26+	13.73 грн
75+	10.68 грн
207+	10.06 грн

Мінімальне замовлення: 7

PJD25N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	9.28 грн

Мінімальне замовлення: 3000

PJD25N03_L2_00001

на замовлення 3000 шт:

термін постачання 7-14 дні (днів)

5+	64.72 грн
10+	28.01 грн
25+	16.48 грн
75+	12.82 грн
207+	12.07 грн
6000+	11.74 грн

Мінімальне замовлення: 5

PJD25N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

на замовлення 2036 шт:

термін постачання 21-30 дні (днів)

11+	30.38 грн
13+	25.27 грн
100+	16.38 грн
500+	12.85 грн
1000+	10.26 грн
3000+	8.66 грн
9000+	7.86 грн

Мінімальне замовлення: 11

PJD25N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD25N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD25N04-L2-00001

MOSFET

товар відсутній

PJD25N04V-AU_L2_002A1

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт

товар відсутній

PJD25N04V-AU_L2_002A1

товар відсутній

PJD25N04V-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	107.22 грн
10+	87.3 грн
100+	60.93 грн
250+	56.2 грн
500+	51.01 грн
1000+	43.75 грн
3000+	41.55 грн

Мінімальне замовлення: 3

PJD25N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V

товар відсутній

PJD25N04_L2_00001

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD25N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V

товар відсутній

PJD25N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD25N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD25N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101

на замовлення 737 шт:

термін постачання 21-31 дні (днів)

6+	51.15 грн
10+	42.87 грн
100+	29.66 грн
500+	23.26 грн

Мінімальне замовлення: 6

PJD25N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V

товар відсутній

PJD25N06A_L2_00001

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced

товар відсутній

PJD25N06A_L2_00001

MOSFET 60V N-Channel Enhancement Mode MOSFET

на замовлення 71852 шт:

термін постачання 21-30 дні (днів)

8+	41.18 грн
10+	34.46 грн
100+	22.44 грн
500+	17.58 грн
1000+	14.05 грн
3000+	11.45 грн
9000+	10.79 грн

Мінімальне замовлення: 8

PJD25N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V

на замовлення 1249 шт:

термін постачання 21-31 дні (днів)

8+	38.18 грн
10+	30.94 грн
100+	21.5 грн
500+	15.75 грн
1000+	12.8 грн

Мінімальне замовлення: 8

PJD25N06A_L2_00001

товар відсутній

PJD25N10A_L2_00001

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V

на замовлення 2803 шт:

термін постачання 21-31 дні (днів)

6+	48.98 грн
10+	41.27 грн
100+	28.56 грн
500+	22.39 грн
1000+	19.06 грн

Мінімальне замовлення: 6

PJD25N10A_L2_00001

MOSFET 100V N-Channel Enhancement Mode MOSFET

на замовлення 1750 шт:

термін постачання 21-30 дні (днів)

6+	53.45 грн
10+	46.56 грн
100+	27.64 грн
500+	23.11 грн
1000+	20.18 грн
3000+	17.11 грн
6000+	16.45 грн

Мінімальне замовлення: 6

PJD25N10A_L2_00001

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V

товар відсутній

PJD25P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD25P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD25P03_L2_00001

MOSFET 30V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD2NA1K_L2_00001

MOSFET PJ/D2NA1K/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-1000SMN//PJ/TO252-AS82/TO252-AS83/TO252-AS02

товар відсутній

PJD2NA1K_L2_00001

Description: 1000V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V

товар відсутній

PJD2NA60_L2_00001

MOSFET PJ/D2NA60/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-600SMN/NF600-QI29/PJ/TO252-AS26/TO252-AS27/TO252-AS02

товар відсутній

PJD2NA60_R2_00001

MOSFET PJ/D2NA60/TR/13"/HF/3K/TO-252AA/MOS/TO/NFET-600SMN/NF600-QI29/PJ/TO252-AS26/TO252-AS27/TO252-AS02

товар відсутній

PJD2NA70_L2_00001

MOSFET PJ/D2NA70/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-700SMN/NF700-QI10/PJ/TO252-AS32/TO252-AS33/TO252-AS02

товар відсутній

PJD2NA90_L2_00001

MOSFET PJ/D2NA90/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-900SMN//PJ/TO252-AS55/TO252-AS56/TO252-AS02

товар відсутній

PJD30N04S-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	107.99 грн
10+	86.54 грн
100+	59.07 грн
500+	50.01 грн
1000+	40.76 грн
3000+	38.42 грн
6000+	36.56 грн

Мінімальне замовлення: 3

PJD30N15_L2_00001

Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V

на замовлення 2986 шт:

термін постачання 21-31 дні (днів)

4+	77.08 грн
10+	66.11 грн
100+	51.56 грн
500+	39.97 грн
1000+	31.56 грн

Мінімальне замовлення: 4

PJD30N15_L2_00001

MOSFET 150V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD30N15_L2_00001

Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V

товар відсутній

PJD342

на замовлення 306 шт:

термін постачання 14-28 дні (днів)

PJD35N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V

товар відсутній

PJD35N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V

товар відсутній

PJD35N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD35N06A_L2_00001

MOSFET 60V N-Channel Enhancement Mode MOSFET

на замовлення 2976 шт:

термін постачання 21-30 дні (днів)

8+	44.05 грн
10+	37.14 грн
100+	24.17 грн
500+	18.98 грн
1000+	15.12 грн
3000+	12.79 грн
6000+	12.45 грн

Мінімальне замовлення: 8

PJD35N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V

на замовлення 2730 шт:

термін постачання 21-31 дні (днів)

7+	45.38 грн
10+	37.39 грн
100+	27.9 грн
500+	20.57 грн
1000+	15.9 грн

Мінімальне замовлення: 7

PJD35N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V

товар відсутній

PJD35P03_L2_00001

PJD35P03-L2 SMD P channel transistors

на замовлення 3000 шт:

термін постачання 7-14 дні (днів)

5+	64.72 грн
69+	14.07 грн
190+	13.32 грн
6000+	13.31 грн

Мінімальне замовлення: 5

PJD35P03_L2_00001

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 2901 шт:

термін постачання 21-30 дні (днів)

8+	43.12 грн
10+	36.22 грн
100+	23.51 грн
500+	18.51 грн
1000+	14.78 грн
3000+	12.45 грн
6000+	12.12 грн

Мінімальне замовлення: 8

PJD3NA50_L2_00001

MOSFET 500V N-Channel MOSFET

товар відсутній

PJD3NA80_L2_00001

MOSFET 800V N-Channel MOSFET

товар відсутній

PJD40N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD40N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

на замовлення 2985 шт:

термін постачання 21-31 дні (днів)

6+	55.47 грн
10+	46.82 грн
100+	35.91 грн
500+	26.64 грн
1000+	21.31 грн

Мінімальне замовлення: 6

PJD40N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD40N04_L2_00001

LED Displays & Accessories 40MM LED AC ADAPTER DISPLAY LI

товар відсутній

PJD40N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M

на замовлення 2950 шт:

термін постачання 21-31 дні (днів)

8+	40.34 грн
10+	33.16 грн
100+	24.79 грн
500+	18.27 грн
1000+	14.12 грн

Мінімальне замовлення: 8

PJD40N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD40N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD40N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD40N06A-L2-00001

MOSFET

товар відсутній

PJD40N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V

товар відсутній

PJD40N06A_L2_00001

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD40N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V

товар відсутній

PJD40N15_L2_00001

MOSFET 150V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD40N15_L2_00001

Description: 150V N-CHANNEL ENHANCEMENT MODE

товар відсутній

PJD40N15_L2_00001

Description: 150V N-CHANNEL ENHANCEMENT MODE

товар відсутній

PJD40P03E-AU_L2_006A1

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced

товар відсутній

PJD40P03E-AU_L2_006A1

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 2990 шт:

термін постачання 21-30 дні (днів)

4+	89.35 грн
10+	72.68 грн
100+	49.21 грн
500+	41.75 грн
1000+	34.03 грн
3000+	31.96 грн
6000+	30.5 грн

Мінімальне замовлення: 4

PJD40P03E-AU_L2_006A1

товар відсутній

PJD45N03-L2-00001

MOSFET

товар відсутній

PJD45N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD45N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V

товар відсутній

PJD45N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V

товар відсутній

PJD45N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD45N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V

товар відсутній

PJD45N06A_L2_00001

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт

на замовлення 3000 шт:

термін постачання 7-14 дні (днів)

5+	65.17 грн
9+	29.3 грн
25+	25.39 грн
49+	19.65 грн
134+	18.56 грн
6000+	18.15 грн

Мінімальне замовлення: 5

PJD45N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V

на замовлення 1351 шт:

термін постачання 21-31 дні (днів)

6+	48.98 грн
10+	40.79 грн
100+	28.26 грн
500+	22.16 грн
1000+	18.86 грн

Мінімальне замовлення: 6

PJD45N06A_L2_00001

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

7+	54.31 грн
15+	23.52 грн
25+	21.16 грн
49+	16.37 грн
134+	15.47 грн

Мінімальне замовлення: 7

PJD45N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V

товар відсутній

PJD45N06A_L2_00001

MOSFET 60V N-Channel Enhancement Mode MOSFET

на замовлення 14296 шт:

термін постачання 21-30 дні (днів)

6+	52.05 грн
10+	44.88 грн
100+	26.64 грн
500+	22.24 грн
1000+	19.45 грн
3000+	16.45 грн
6000+	15.92 грн

Мінімальне замовлення: 6

PJD45P03E-AU_L2_006A1

товар відсутній

PJD45P03E-AU_L2_006A1

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 2998 шт:

термін постачання 21-30 дні (днів)

3+	139.07 грн
10+	114.11 грн
100+	79.25 грн
250+	73.25 грн
500+	66.26 грн
1000+	56.87 грн
3000+	54.07 грн

Мінімальне замовлення: 3

PJD45P03E-AU_L2_006A1

товар відсутній

PJD45P04_L2_00001

MOSFET 40V P-Channel Enhancement Mode MOSFET

на замовлення 2618 шт:

термін постачання 21-30 дні (днів)

6+	60.6 грн
10+	52.92 грн
100+	35.29 грн
500+	27.9 грн
1000+	23.24 грн
3000+	19.65 грн
9000+	18.11 грн

Мінімальне замовлення: 6

PJD45P04_L2_00001

PJD45P04-L2 SMD P channel transistors

товар відсутній

PJD45P04_L2_00001

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V

на замовлення 2689 шт:

термін постачання 21-31 дні (днів)

5+	60.51 грн
10+	50.99 грн
100+	39.09 грн
500+	29 грн
1000+	23.2 грн

Мінімальне замовлення: 5

PJD45P04_L2_00001

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V

товар відсутній

PJD4NA65H_L2_00001

MOSFET PJ/D4NA65H/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN//PJ/TO252-AS53/TO252-AS54/TO252-AS02

товар відсутній

PJD4NA70_L2_00001

MOSFET PJ/D4NA70/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-700SMN//PJ/TO252-AS34/TO252-AS35/TO252-AS02

товар відсутній

PJD4NA90_L2_00001

Description: 900V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V

товар відсутній

PJD4NA90_L2_00001

Description: 900V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V

товар відсутній

PJD4NA90_L2_00001

MOSFET 900V N-Channel MOSFET

товар відсутній

PJD50N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 64.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

товар відсутній

PJD50N04-AU_L2_000A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 2978 шт:

термін постачання 21-30 дні (днів)

5+	66.5 грн
10+	57.51 грн
100+	34.1 грн
500+	28.57 грн
1000+	24.97 грн
3000+	21.18 грн
6000+	20.38 грн

Мінімальне замовлення: 5

PJD50N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 64.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

на замовлення 2653 шт:

термін постачання 21-31 дні (днів)

5+	61.23 грн
10+	50.99 грн
100+	35.29 грн
500+	27.67 грн
1000+	23.55 грн

Мінімальне замовлення: 5

PJD50N04V-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Qualification: AEC-Q101

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3+	108.77 грн
10+	87.2 грн
100+	69.38 грн
500+	55.1 грн
1000+	46.75 грн

Мінімальне замовлення: 3

PJD50N04V-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	118.09 грн
10+	96.49 грн
100+	66.59 грн
250+	61.33 грн
500+	56.2 грн
1000+	48.15 грн
3000+	45.68 грн

Мінімальне замовлення: 3

PJD50N04V-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Qualification: AEC-Q101

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	49.14 грн

Мінімальне замовлення: 3000

PJD50N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V

на замовлення 1950 шт:

термін постачання 21-31 дні (днів)

7+	43.22 грн
10+	35.72 грн
100+	24.83 грн
500+	18.19 грн
1000+	14.79 грн

Мінімальне замовлення: 7

PJD50N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V

товар відсутній

PJD50N04_L2_00001

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD50N10AL-AU_L2_000A1

MOSFET 100V N-Channel Enhancement Mode MOSFET

на замовлення 2723 шт:

термін постачання 21-30 дні (днів)

5+	70.08 грн
10+	56.52 грн
100+	38.29 грн
500+	32.43 грн
1000+	27.7 грн
3000+	23.44 грн

Мінімальне замовлення: 5

PJD50N10AL-AU_L2_000A1

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V
Qualification: AEC-Q101

на замовлення 1297 шт:

термін постачання 21-31 дні (днів)

5+	64.83 грн
10+	50.85 грн
100+	39.56 грн
500+	31.47 грн
1000+	25.63 грн

Мінімальне замовлення: 5

PJD50N10AL-AU_L2_000A1

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V
Qualification: AEC-Q101

товар відсутній

PJD50N10AL_L2_00001

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V

товар відсутній

PJD50N10AL_L2_00001

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V

на замовлення 2946 шт:

термін постачання 21-31 дні (днів)

5+	60.51 грн
10+	50.36 грн
100+	34.84 грн
500+	27.33 грн
1000+	23.26 грн

Мінімальне замовлення: 5

PJD50N10AL_L2_00001

MOSFET 100V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD50P04-AU_L2_000A1

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V

товар відсутній

PJD50P04-AU_L2_000A1

MOSFET 40V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD50P04-AU_L2_000A1

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V

на замовлення 2750 шт:

термін постачання 21-31 дні (днів)

4+	72.76 грн
10+	57.3 грн
100+	44.58 грн
500+	35.46 грн
1000+	28.89 грн

Мінімальне замовлення: 4

PJD50P04_L2_00001

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V

на замовлення 5861 шт:

термін постачання 21-31 дні (днів)

6+	55.47 грн
10+	46.48 грн
100+	32.16 грн
500+	25.22 грн
1000+	21.46 грн

Мінімальне замовлення: 6

PJD50P04_L2_00001

MOSFET 40V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD50P04_L2_00001

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V

товар відсутній

PJD55N03-L2-00001

MOSFET

товар відсутній

PJD55N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V

товар відсутній

PJD55N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD55N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V

товар відсутній

PJD55N04S-AU

Panjit N CHAN 40V TO-252AA-2

товар відсутній

PJD55N04S-AU_L2_002A1

товар відсутній

PJD55N04S-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD55N04S-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	107.22 грн
10+	87.3 грн
100+	60.93 грн
250+	56.2 грн
500+	51.01 грн
1000+	43.75 грн
3000+	41.55 грн

Мінімальне замовлення: 3

PJD55N04S-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD55N04S-AU_L2_002A1

товар відсутній

PJD55N04V-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD55N04V-AU_L2_002A1

товар відсутній

PJD55N04V-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD55N04V-AU_L2_002A1

товар відсутній

PJD55N04V-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD55P03E-AU_L2_006A1

товар відсутній

PJD55P03E-AU_L2_006A1

товар відсутній

PJD55P03E-AU_L2_006A1

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	144.51 грн
10+	118.7 грн
100+	81.91 грн
250+	75.25 грн
500+	68.59 грн
1000+	59.07 грн
3000+	56.14 грн

Мінімальне замовлення: 3

PJD5NA50_L2_00001

Description: 500V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V

товар відсутній

PJD5NA50_L2_00001

MOSFET 500V N-Channel MOSFET

товар відсутній

PJD5NA50_L2_00001

Description: 500V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V

товар відсутній

PJD5NA80_L2_00001

Description: 800V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V

товар відсутній

PJD5NA80_L2_00001

MOSFET 800V N-Channel MOSFET

товар відсутній

PJD5NA80_L2_00001

Description: 800V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V

товар відсутній

PJD60N04-AU-L2-000A1

MOSFET

товар відсутній

PJD60N04-AU_L2_000A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD60N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD60N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD60N04S-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

2+	166.26 грн
10+	136.32 грн
100+	93.9 грн
250+	86.57 грн
500+	78.58 грн
1000+	67.26 грн
3000+	64.4 грн

Мінімальне замовлення: 2

PJD60N04_L2_00001

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD60N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V

товар відсутній

PJD60N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V

товар відсутній

PJD60N06-L2-00001

MOSFET

товар відсутній

PJD60N06A-L2-00001

MOSFET

товар відсутній

PJD60N08-L2-00001

MOSFET

товар відсутній

PJD60P04E-AU_L2_006A1

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V

товар відсутній

PJD60P04E-AU_L2_006A1

MOSFET 40V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	105.66 грн
10+	85.77 грн
100+	58.07 грн
500+	49.21 грн
1000+	40.09 грн
3000+	37.76 грн
6000+	35.89 грн

Мінімальне замовлення: 3

PJD60P04E-AU_L2_006A1

товар відсутній

PJD60P04E-AU_L2_006A1

товар відсутній

PJD60P04E-AU_L2_006A1

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V

товар відсутній

PJD60R390E_L2_00001

Description: 600V N-CHANNEL SUPER JUNCTION MO

товар відсутній

PJD60R390E_L2_00001

MOSFET 600V N-Channel Super Junction MOSFET

товар відсутній

PJD60R390E_L2_00001

Description: 600V N-CHANNEL SUPER JUNCTION MO

товар відсутній

PJD60R540E_L2_00001

MOSFET 600V N-Channel Super Junction MOSFET

товар відсутній

PJD60R620E_L2_00001

Description: 600V N-CHANNEL SUPER JUNCTION MO

товар відсутній

PJD60R620E_L2_00001

MOSFET 600V N-Channel Super Junction MOSFET

товар відсутній

PJD60R620E_L2_00001

Description: 600V N-CHANNEL SUPER JUNCTION MO

товар відсутній

PJD60R980E_L2_00001

MOSFET 600V N-Channel Super Junction MOSFET

товар відсутній

PJD6NA40_L2_00001

MOSFET 400V N-Channel MOSFET

товар відсутній

PJD6NA40_R2_00001

MOSFET 400V N-Channel MOSFET

товар відсутній

PJD70N06-L2-00001

MOSFET

товар відсутній

PJD70N10-L2-00001

MOSFET

товар відсутній

PJD70P03E-AU_L2_006A1

товар відсутній

PJD70P03E-AU_L2_006A1

товар відсутній

PJD70P03E-AU_L2_006A1

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 2875 шт:

термін постачання 21-30 дні (днів)

4+	100.22 грн
10+	81.18 грн
100+	55.14 грн
500+	46.68 грн
1000+	38.09 грн
3000+	35.83 грн
6000+	34.1 грн

Мінімальне замовлення: 4

PJD70P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V

на замовлення 766 шт:

термін постачання 21-31 дні (днів)

7+	44.66 грн
10+	37.39 грн
100+	25.87 грн
500+	20.28 грн

Мінімальне замовлення: 7

PJD70P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V

товар відсутній

PJD75P04E-AU_L2_006A1

товар відсутній

PJD75P04E-AU_L2_006A1

MOSFET 40V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	135.18 грн
10+	110.28 грн
100+	76.58 грн
250+	70.59 грн
500+	63.8 грн
1000+	55.14 грн
3000+	52.41 грн

Мінімальне замовлення: 3

PJD75P04E-AU_L2_006A1

товар відсутній

PJD7NA65_L2_00001

MOSFET PJ/D7NA65/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN/NF650-QI13/PJ/TO252-AS06/TO252-AS07/TO252-AS02

товар відсутній

PJD7NA65_R2_00001

MOSFET PJ/D7NA65/TR/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN/NF650-QI13/PJ/TO252-AS06/TO252-AS07/TO252-AS02

товар відсутній

PJD80N03-L2-00001

MOSFET

товар відсутній

PJD80N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V

товар відсутній

PJD80N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V

товар відсутній

PJD80N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD80N04-AU-L2-000A1

MOSFET TO-252AA/MOS/TO/NFET-40SMN

товар відсутній

PJD80N04-AU_L2_000A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD80N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

на замовлення 5990 шт:

термін постачання 21-31 дні (днів)

4+	76.36 грн
10+	60.42 грн
100+	46.98 грн
500+	37.37 грн
1000+	30.44 грн

Мінімальне замовлення: 4

PJD80N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	31.71 грн

Мінімальне замовлення: 3000

PJD80N04-L2-00001

MOSFET

товар відсутній

PJD80N04S-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4973 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD80N04S-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD80N04S-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4973 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD80N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V

товар відсутній

PJD80N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V

на замовлення 1327 шт:

термін постачання 21-31 дні (днів)

7+	47.54 грн
10+	39.61 грн
100+	27.39 грн
500+	21.48 грн
1000+	18.28 грн

Мінімальне замовлення: 7

PJD80N04_L2_00001

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD80N06-L2-00001

MOSFET

товар відсутній

PJD85N03-AU-L2-000A1

MOSFET

товар відсутній

PJD85N03-AU_L2_000A1

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD85N03-AU_L2_000A1

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD85N03-AU_L2_000A1

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD85N03-L2-00001

MOSFET

товар відсутній

PJD85N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V

товар відсутній

PJD85N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V

товар відсутній

PJD85N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD882

на замовлення 1000 шт:

термін постачання 14-28 дні (днів)

PJD8NA50_L2_00001

MOSFET 500V N-Channel MOSFET

товар відсутній

PJD8NA50_R2_00001

MOSFET 500V N-Channel MOSFET

товар відсутній

PJD8NA65A_L2_00001

MOSFET PJ/D8NA65A/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN//PJ/TO252-AS96/PJx8NA65A-AS20/TO252-AS02

товар відсутній

PJD90N03-L2-00001

MOSFET

товар відсутній

PJD90N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V

на замовлення 2983 шт:

термін постачання 21-31 дні (днів)

4+	77.8 грн
10+	61.11 грн
100+	47.55 грн
500+	37.83 грн
1000+	30.81 грн

Мінімальне замовлення: 4

PJD90N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V

товар відсутній

PJD90N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD90P03E-AU_L2_006A1

товар відсутній

PJD90P03E-AU_L2_006A1

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

2+	192.68 грн
10+	159.29 грн
25+	131.19 грн
100+	111.88 грн
250+	105.88 грн
500+	99.89 грн
1000+	85.24 грн

Мінімальне замовлення: 2

PJD90P03E-AU_L2_006A1

товар відсутній

PJD95P04E-AU_L2_006A1

MOSFET 40V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	128.97 грн
10+	106.45 грн
100+	73.92 грн
250+	67.93 грн
500+	61.33 грн
1000+	55.54 грн
3000+	47.21 грн

Мінімальне замовлення: 3

PJD9N10A_L2_00001

Description: 100V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 152mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1021 pF @ 25 V

на замовлення 11566 шт:

термін постачання 21-31 дні (днів)

9+	35.3 грн
10+	29.2 грн
100+	20.28 грн
500+	14.86 грн
1000+	12.08 грн

Мінімальне замовлення: 9

PJD9N10A_L2_00001

MOSFET 100V N-Channel MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

9+	38.3 грн
10+	32.55 грн
100+	21.11 грн
500+	16.58 грн
1000+	13.25 грн
3000+	11.19 грн
9000+	10.19 грн

Мінімальне замовлення: 9

PJD9N10A_L2_00001

Description: 100V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 152mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1021 pF @ 25 V

на замовлення 9000 шт:

термін постачання 21-31 дні (днів)

3000+	11.95 грн
6000+	10.92 грн
9000+	10.14 грн

Мінімальне замовлення: 3000

PJD9P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V

товар відсутній

PJD9P06A-AU_L2_000A1

MOSFET 60V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

7+	45.29 грн
10+	39.59 грн
100+	26.44 грн
500+	20.91 грн
1000+	16.71 грн
3000+	15.12 грн
6000+	14.58 грн

Мінімальне замовлення: 7

PJD9P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V

на замовлення 2616 шт:

термін постачання 21-31 дні (днів)

8+	40.34 грн
10+	34.13 грн
100+	26.19 грн
500+	19.43 грн
1000+	15.54 грн

Мінімальне замовлення: 8

PJD9P06A-L2-00001

MOSFET

товар відсутній

PJD9P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V

товар відсутній

PJD9P06A_L2_00001

MOSFET 60V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD9P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V

на замовлення 1032 шт:

термін постачання 21-31 дні (днів)

5+	58.35 грн
10+	46.34 грн
100+	36.06 грн
500+	28.68 грн
1000+	23.36 грн

Мінімальне замовлення: 5

PJDLC05

SOT23 10+

на замовлення 12000 шт:

термін постачання 14-28 дні (днів)

PJDLC05

09+ QFP

на замовлення 3000 шт:

термін постачання 14-28 дні (днів)

PJDLC05C-02-R1-00001

MOSFET

товар відсутній

PJDLC05C-02TB

на замовлення 63000 шт:

термін постачання 14-28 дні (днів)

PJDLC05C-03-R1-00001

MOSFET

товар відсутній

PJDLC05C-05-R1-00001

MOSFET

товар відсутній

PJDLC05T/R

на замовлення 3000 шт:

термін постачання 14-28 дні (днів)

PJDLC05T/R/T2S

PANJIT

SOT-23 09+

на замовлення 6000 шт:

термін постачання 14-28 дні (днів)

PJDLC05_R1_00001