Продукція > RUQ
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| RUQ050N02 | на замовлення 33000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
| RUQ050N02FRA | ROHM Semiconductor | MOSFET | товар відсутній | |||||||||||||||
| RUQ050N02FRATR | ROHM | Description: ROHM - RUQ050N02FRATR - Leistungs-MOSFET, n-Kanal, 20 V, 5 A, 0.022 ohm, TSMT, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 5 Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 1.25 Gate-Source-Schwellenspannung, max.: 1.5 Verlustleistung: 1.25 Bauform - Transistor: TSMT Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.022 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.022 SVHC: No SVHC (10-Jun-2022) | товар відсутній | |||||||||||||||
| RUQ050N02FRATR | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||
| RUQ050N02FRATR | ROHM | Description: ROHM - RUQ050N02FRATR - Leistungs-MOSFET, n-Kanal, 20 V, 5 A, 0.022 ohm, TSMT, Oberflächenmontage Verlustleistung: 1.25 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.022 Qualifikation: AEC-Q101 SVHC: No SVHC (10-Jun-2022) | товар відсутній | |||||||||||||||
| RUQ050N02FRATR | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
| RUQ050N02HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 20V 5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V Qualification: AEC-Q101 | на замовлення 3969 шт: термін постачання 21-31 дні (днів) |
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| RUQ050N02HZGTR | ROHM Semiconductor | MOSFET Automotive Nch 20V 5A Small Signal MOSFET. RUQ050N02HZG is a MOSFET with low on - resistance, suitable for switching. | на замовлення 4022 шт: термін постачання 21-30 дні (днів) |
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| RUQ050N02HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 20V 5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V Qualification: AEC-Q101 | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| RUQ050N02TR | Rohm Semiconductor | Description: MOSFET N-CH 20V 5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V | товар відсутній | |||||||||||||||
| RUQ050N02TR | на замовлення 3000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
| RUQ050N02TR | ROHM Semiconductor | MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 5A | товар відсутній | |||||||||||||||
| RUQ050N02TR | Rohm Semiconductor | Description: MOSFET N-CH 20V 5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V | на замовлення 2985 шт: термін постачання 21-31 дні (днів) |
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