Продукція > WMZ
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|
| WMZ12A-105S | на замовлення 10000 шт: термін постачання 14-28 дні (днів) | |||
| WMZ12A-105SL18RM150 | на замовлення 10000 шт: термін постачання 14-28 дні (днів) | |||
| WMZ13N65EM | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.5A Pulsed drain current: 35A Power dissipation: 85W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 20.3nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |
| WMZ13N65EM | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.5A Pulsed drain current: 35A Power dissipation: 85W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 20.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |
| WMZ26N60C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |
| WMZ26N60C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |
| WMZ26N65C4 | WAYON | WMZ26N65C4-CYG SMD N channel transistors | товар відсутній | |
| WMZ36N65C4 | WAYON | WMZ36N65C4-CYG SMD N channel transistors | товар відсутній | |
| WMZ53N60F2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 280W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |
| WMZ53N60F2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 280W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній |