Продукція > YJ4
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| YJ40705TC | Magnetics, a division of Spang & Co. | Description: FERRITE CORE TOROID 4.175UH Tolerance: ±20% Packaging: Bulk Diameter: 0.300" (7.62mm) Height: 0.188" (4.78mm) Core Type: Toroid Inductance Factor (Al): 4.175 µH Initial Permeability (µi): 5000 Finish: Parylene Gap: Ungapped Part Status: Active Effective Length (le) mm: 15 Effective Area (Ae) mm²: 9.9 Effective Magnetic Volume (Ve) mm³: 149 | на замовлення 5490 шт: термін постачання 21-31 дні (днів) |
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| YJ41003TC | Magnetics, a division of Spang & Co. | Description: TOROID-PARYLENE COATED Tolerance: ±20% Packaging: Bulk Material: J Diameter: 0.388" (9.86mm) Height: 0.133" (3.38mm) Core Type: Toroid Inductance Factor (Al): 2.196 µH Initial Permeability (µi): 5000 Finish: Parylene Gap: Ungapped Effective Length (le) mm: 20.7 Effective Area (Ae) mm²: 7.3 Effective Magnetic Volume (Ve) mm³: 151 | товар відсутній | |||||||||||||||||||
| YJ41005TC | Magnetics, a division of Spang & Co. | Description: TOROID-PARYLENE COATED Tolerance: ±20% Packaging: Bulk Material: J Diameter: 0.388" (9.86mm) Height: 0.196" (4.98mm) Core Type: Toroid Inductance Factor (Al): 3.308 µH Initial Permeability (µi): 5000 Finish: Parylene Gap: Ungapped Effective Length (le) mm: 20.7 Effective Area (Ae) mm²: 10.9 Effective Magnetic Volume (Ve) mm³: 227 | товар відсутній | |||||||||||||||||||
| YJ41306TC | Magnetics, a division of Spang & Co. | Description: TOROID PARYLENE COATED Packaging: Bulk Tolerance: ±20% Material: J Diameter: 0.513" (13.04mm) Height: 0.260" (6.60mm) Core Type: Toroid Inductance Factor (Al): 2.968 µH Initial Permeability (µi): 5000 Finish: Parylene Gap: Ungapped Effective Length (le) mm: 31.7 Effective Area (Ae) mm²: 14.2 Effective Magnetic Volume (Ve) mm³: 451.2 | товар відсутній | |||||||||||||||||||
| YJ4N60CI | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 16A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
| YJ4N60CI | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 16A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||||
| YJ4N60CP | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт | товар відсутній | |||||||||||||||||||
| YJ4N60CP | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
| YJ4N65CP | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||||
| YJ4N65CP | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||||
| YJ4N65CZ | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||||
| YJ4N65CZ | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm | товар відсутній | |||||||||||||||||||
| YJ4N70CI | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 16A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||||
| YJ4N70CI | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 16A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced | товар відсутній |