Продукція > PANJIT INTERNATIONAL INC. > Всі товари виробника PANJIT INTERNATIONAL INC. (10965) > Сторінка 54 з 183
Фото | Назва | Виробник | Інформація |
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MBR645F_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 45V 6A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
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MBR650_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 50V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 50 V |
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MBR660_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 60V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
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MBR690F_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 90V 6A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 90 V |
на замовлення 1922 шт: термін постачання 21-31 дні (днів) |
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MBR640_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
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MBR6200_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 200V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
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MBR6150_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 150V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V |
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MBR650F_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 50V 6A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 50 V |
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MBR690_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 90V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 90 V |
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MBR645_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 45V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
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MBR680_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 80V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 80 V |
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BZT52-C5V1-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIOD Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123 Grade: Automotive Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 800 mV Qualification: AEC-Q101 |
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BZT52-C5V1-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIOD Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123 Grade: Automotive Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 800 mV Qualification: AEC-Q101 |
на замовлення 2053 шт: термін постачання 21-31 дні (днів) |
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PJL9452A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 3.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V |
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PJW3N10A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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PJW3N10A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V |
на замовлення 12480 шт: термін постачання 21-31 дні (днів) |
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PJQ5476AL_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V |
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PJQ5476AL_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V |
на замовлення 994 шт: термін постачання 21-31 дні (днів) |
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PJD25N10A_L2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V |
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PJD25N10A_L2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V |
на замовлення 2803 шт: термін постачання 21-31 дні (днів) |
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PJQ5474A_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
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PJQ5474A_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
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PJL9458AL_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V |
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PJL9458AL_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V |
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PJQ4476AP-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 |
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PJQ4476AP-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 4868 шт: термін постачання 21-31 дні (днів) |
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PJW5N10A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V |
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PJW5N10A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V |
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PJW5N10-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V Power Dissipation (Max): 3.1W (Ta), 8W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V |
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PJW5N10-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V Power Dissipation (Max): 3.1W (Ta), 8W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V |
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PJW5N10_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V |
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PJW5N10_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V |
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PJQ5476AL-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 |
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PJQ5476AL-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 2752 шт: термін постачання 21-31 дні (днів) |
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PJQ4476AP_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
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PJQ4476AP_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
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PJA3476_R1_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V |
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PJA3476_R1_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V |
на замовлення 429 шт: термін постачання 21-31 дні (днів) |
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PJQ5472A_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
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PJQ5472A_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
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PJC7476_R1_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
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PJC7476_R1_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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BAV19W_R1_00001 | Panjit International Inc. |
Description: DIODE GEN PURP 100V 200MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V |
товар відсутній |
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BAV19W_R1_00001 | Panjit International Inc. |
Description: DIODE GEN PURP 100V 200MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V |
на замовлення 1187 шт: термін постачання 21-31 дні (днів) |
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SB130AS_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 30V 1A SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Current - Reverse Leakage @ Vr: 45 µA @ 30 V |
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SB130AS_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 30V 1A SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Current - Reverse Leakage @ Vr: 45 µA @ 30 V |
на замовлення 2769 шт: термін постачання 21-31 дні (днів) |
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SBA130AS_R1_00001 | Panjit International Inc. | Description: DIODE SCHOTTKY 30V 1A SOD123 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SBA130AS_R1_00001 | Panjit International Inc. | Description: DIODE SCHOTTKY 30V 1A SOD123 |
на замовлення 14594 шт: термін постачання 21-31 дні (днів) |
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SS0520_R1_00001 | Panjit International Inc. |
Description: SOD-123, SKY Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 10 V |
на замовлення 168000 шт: термін постачання 21-31 дні (днів) |
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SS0520_R1_00001 | Panjit International Inc. |
Description: SOD-123, SKY Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 10 V |
на замовлення 582 шт: термін постачання 21-31 дні (днів) |
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SS1040L_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 1A SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 220 µA @ 40 V |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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SS1040L_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 1A SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 220 µA @ 40 V |
на замовлення 119478 шт: термін постачання 21-31 дні (днів) |
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MMSZ5241B_R1_00001 | Panjit International Inc. |
Description: SOD-123, ZENER Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5241B_R1_00001 | Panjit International Inc. |
Description: SOD-123, ZENER Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V |
на замовлення 10034 шт: термін постачання 21-31 дні (днів) |
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MMSZ5252A_R1_00001 | Panjit International Inc. |
Description: SOD-123, ZENER Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 18 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5252A_R1_00001 | Panjit International Inc. |
Description: SOD-123, ZENER Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 18 V |
на замовлення 11819 шт: термін постачання 21-31 дні (днів) |
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MMSZ5254B_R1_00001 | Panjit International Inc. |
Description: SOD-123, ZENER Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5254B_R1_00001 | Panjit International Inc. |
Description: SOD-123, ZENER Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
на замовлення 5708 шт: термін постачання 21-31 дні (днів) |
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BZT52-C16-AU_R1_000A1 | Panjit International Inc. |
Description: SOD-123, ZENER Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123 Grade: Automotive Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 12 V Qualification: AEC-Q101 |
товар відсутній |
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BZT52-C16-AU_R1_000A1 | Panjit International Inc. |
Description: SOD-123, ZENER Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123 Grade: Automotive Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 12 V Qualification: AEC-Q101 |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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MBR645F_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 45V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE SCHOTTKY 45V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
товар відсутній
MBR650_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 50V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Description: DIODE SCHOTTKY 50V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товар відсутній
MBR660_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 60V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE SCHOTTKY 60V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
товар відсутній
MBR690F_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 90V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Description: DIODE SCHOTTKY 90V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
на замовлення 1922 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 77.92 грн |
50+ | 60.09 грн |
100+ | 47.63 грн |
500+ | 37.88 грн |
1000+ | 30.86 грн |
MBR640_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
товар відсутній
MBR6200_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 200V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE SCHOTTKY 200V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
MBR6150_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 150V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Description: DIODE SCHOTTKY 150V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
товар відсутній
MBR650F_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 50V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Description: DIODE SCHOTTKY 50V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товар відсутній
MBR690_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 90V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Description: DIODE SCHOTTKY 90V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
товар відсутній
MBR645_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 45V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE SCHOTTKY 45V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
товар відсутній
MBR680_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 80V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Description: DIODE SCHOTTKY 80V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
товар відсутній
BZT52-C5V1-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
товар відсутній
BZT52-C5V1-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
на замовлення 2053 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 12.38 грн |
33+ | 8.55 грн |
100+ | 4.59 грн |
500+ | 3.39 грн |
1000+ | 2.35 грн |
PJL9452A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
товар відсутній
PJW3N10A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 11.2 грн |
5000+ | 10.09 грн |
PJW3N10A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
на замовлення 12480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.31 грн |
11+ | 26.09 грн |
100+ | 19.48 грн |
500+ | 14.36 грн |
1000+ | 11.1 грн |
PJQ5476AL_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
товар відсутній
PJQ5476AL_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
на замовлення 994 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.45 грн |
10+ | 57.71 грн |
100+ | 44.26 грн |
500+ | 32.84 грн |
PJD25N10A_L2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
товар відсутній
PJD25N10A_L2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
на замовлення 2803 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 49.52 грн |
10+ | 41.72 грн |
100+ | 28.87 грн |
500+ | 22.64 грн |
1000+ | 19.27 грн |
PJQ5474A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
товар відсутній
PJQ5474A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
товар відсутній
PJL9458AL_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
товар відсутній
PJL9458AL_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
товар відсутній
PJQ4476AP-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
PJQ4476AP-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4868 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 67.72 грн |
10+ | 53.5 грн |
100+ | 41.62 грн |
500+ | 33.1 грн |
1000+ | 26.97 грн |
2000+ | 25.39 грн |
PJW5N10A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
товар відсутній
PJW5N10A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
товар відсутній
PJW5N10-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товар відсутній
PJW5N10-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товар відсутній
PJW5N10_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товар відсутній
PJW5N10_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товар відсутній
PJQ5476AL-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
PJQ5476AL-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2752 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.71 грн |
10+ | 46.98 грн |
100+ | 36.54 грн |
500+ | 29.07 грн |
1000+ | 23.68 грн |
PJQ4476AP_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
товар відсутній
PJQ4476AP_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
товар відсутній
PJA3476_R1_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
товар відсутній
PJA3476_R1_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
на замовлення 429 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.49 грн |
16+ | 18.02 грн |
100+ | 10.2 грн |
PJQ5472A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
товар відсутній
PJQ5472A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
товар відсутній
PJC7476_R1_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
товар відсутній
PJC7476_R1_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.58 грн |
13+ | 22.58 грн |
100+ | 14.09 грн |
500+ | 9.04 грн |
1000+ | 6.96 грн |
BAV19W_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
товар відсутній
BAV19W_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
на замовлення 1187 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 10.92 грн |
40+ | 7.15 грн |
100+ | 3.88 грн |
500+ | 2.86 грн |
1000+ | 1.99 грн |
SB130AS_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
товар відсутній
SB130AS_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
на замовлення 2769 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.13 грн |
15+ | 19.77 грн |
100+ | 9.99 грн |
500+ | 7.65 грн |
1000+ | 5.68 грн |
SBA130AS_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 1A SOD123
Description: DIODE SCHOTTKY 30V 1A SOD123
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.93 грн |
6000+ | 3.29 грн |
SBA130AS_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 1A SOD123
Description: DIODE SCHOTTKY 30V 1A SOD123
на замовлення 14594 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.85 грн |
16+ | 17.67 грн |
100+ | 9.37 грн |
500+ | 5.79 грн |
1000+ | 3.93 грн |
SS0520_R1_00001 |
Виробник: Panjit International Inc.
Description: SOD-123, SKY
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 10 V
Description: SOD-123, SKY
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 10 V
на замовлення 168000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.01 грн |
6000+ | 2.69 грн |
9000+ | 2.23 грн |
30000+ | 2.06 грн |
75000+ | 1.85 грн |
150000+ | 1.6 грн |
SS0520_R1_00001 |
Виробник: Panjit International Inc.
Description: SOD-123, SKY
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 10 V
Description: SOD-123, SKY
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 10 V
на замовлення 582 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 17.48 грн |
24+ | 11.85 грн |
100+ | 5.78 грн |
500+ | 4.52 грн |
SS1040L_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 220 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 220 µA @ 40 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.05 грн |
6000+ | 3.62 грн |
9000+ | 3 грн |
30000+ | 2.77 грн |
75000+ | 2.49 грн |
SS1040L_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 220 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 220 µA @ 40 V
на замовлення 119478 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 24.03 грн |
18+ | 15.92 грн |
100+ | 7.77 грн |
500+ | 6.08 грн |
1000+ | 4.23 грн |
MMSZ5241B_R1_00001 |
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.3 грн |
6000+ | 2.1 грн |
9000+ | 1.78 грн |
MMSZ5241B_R1_00001 |
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
на замовлення 10034 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 13.11 грн |
31+ | 9.12 грн |
100+ | 4.91 грн |
500+ | 3.62 грн |
1000+ | 2.51 грн |
MMSZ5252A_R1_00001 |
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Description: SOD-123, ZENER
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.13 грн |
6000+ | 1.94 грн |
MMSZ5252A_R1_00001 |
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Description: SOD-123, ZENER
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
на замовлення 11819 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 12.38 грн |
34+ | 8.41 грн |
100+ | 4.53 грн |
500+ | 3.34 грн |
1000+ | 2.32 грн |
MMSZ5254B_R1_00001 |
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.13 грн |
MMSZ5254B_R1_00001 |
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
на замовлення 5708 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 12.38 грн |
34+ | 8.41 грн |
100+ | 4.53 грн |
500+ | 3.34 грн |
1000+ | 2.32 грн |
BZT52-C16-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
товар відсутній
BZT52-C16-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 12.38 грн |
34+ | 8.41 грн |
100+ | 4.53 грн |
500+ | 3.34 грн |
1000+ | 2.32 грн |