Технічний опис 110MT120KB IR
Description: BRIDGE RECT 3P 1.2KV 110A MTK, Current - Reverse Leakage @ Vr: 10 mA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A, Current - Average Rectified (Io): 110 A, Voltage - Peak Reverse (Max): 1.2 kV, Supplier Device Package: MTK, Technology: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Diode Type: Three Phase, Mounting Type: Chassis Mount, Package / Case: MTK, Packaging: Bulk.
Інші пропозиції 110MT120KB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 110MT120KB | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: BRIDGE RECT 3P 1.2KV 110A MTKCurrent - Reverse Leakage @ Vr: 10 mA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A Current - Average Rectified (Io): 110 A Voltage - Peak Reverse (Max): 1.2 kV Supplier Device Package: MTK Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: MTK Packaging: Bulk |
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