Технічний опис 2N3417 FSC
Description: TRANS NPN 50V 0.5A TO92-3, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA).
Інші пропозиції 2N3417
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
2N3417 | onsemi |
Description: TRANS NPN 50V 0.5A TO92-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
товару немає в наявності |
В кошику од. на суму грн. |
|
2N3417 | onsemi |
Bipolar Transistors - BJT NPN Transistor General Purpose |
товару немає в наявності |
В кошику од. на суму грн. |
|
2N3417 | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Transistor General Purpose |
товару немає в наявності |
В кошику од. на суму грн. |
| 2N3417 |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Description: TRANS NPN 50V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
товару немає в наявності
В кошику
од. на суму грн.
| 2N3417 |
![]() |
Виробник: onsemi
Bipolar Transistors - BJT NPN Transistor General Purpose
Bipolar Transistors - BJT NPN Transistor General Purpose
товару немає в наявності
В кошику
од. на суму грн.
| 2N3417 |
![]() |
Виробник: onsemi / Fairchild
Bipolar Transistors - BJT NPN Transistor General Purpose
Bipolar Transistors - BJT NPN Transistor General Purpose
товару немає в наявності
В кошику
од. на суму грн.



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