Технічний опис 2N3767 MOT
Description: TRANS NPN 80V 500UA TO66, Power - Max: 25 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 500 µA, Part Status: Active, Supplier Device Package: TO-66 (TO-213AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V, Current - Collector Cutoff (Max): 500µA, Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-213AA, TO-66-2, Packaging: Bulk.
Інші пропозиції 2N3767
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2N3767 | Виробник : Microchip Technology |
Description: TRANS NPN 80V 500UA TO66 Power - Max: 25 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 500 µA Part Status: Active Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk |
товару немає в наявності |
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2N3767 | Виробник : Microchip Technology |
 Bipolar Transistors - BJT 80V 4A NPN Power BJT THT |
товару немає в наявності |