Технічний опис 2N4449 RAY
Description: TRANS NPN 20V TO46, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Supplier Device Package: TO-46 (TO-206AB), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V, Current - Collector Cutoff (Max): 400nA, Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk.
Інші пропозиції 2N4449
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N4449 | Виробник : Microchip Technology |
 Description: TRANS NPN 20V TO46Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 20 V Supplier Device Package: TO-46 (TO-206AB) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Current - Collector Cutoff (Max): 400nA Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
товару немає в наявності |
||
| 2N4449 | Виробник : Microchip Technology |
Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |