Технічний опис 2N5581 MOT
Description: TRANS NPN 50V 0.8A TO46, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 800 mA, Supplier Device Package: TO-46 (TO-206AB), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Operating Temperature: -55°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk.
Інші пропозиції 2N5581
| Фото | Назва | Виробник | Інформація |
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2N5581 | Виробник : Microchip Technology |
 Description: TRANS NPN 50V 0.8A TO46Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Supplier Device Package: TO-46 (TO-206AB) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
товару немає в наявності |
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| 2N5581 | Виробник : Microchip Technology |
Bipolar Transistors - BJT 50V 800MA 500MW Small-Signal BJT THT |
товару немає в наявності |