Технічний опис 2N657S MOT
Description: TRANS NPN 40V TO-5AA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk, Power - Max: 600 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Part Status: Active, Supplier Device Package: TO-5AA.
Інші пропозиції 2N657S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2N657S | Виробник : Microchip Technology |
Description: TRANS NPN 40V TO-5AA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 40 V Part Status: Active Supplier Device Package: TO-5AA |
товару немає в наявності |
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| 2N657S | Виробник : Microchip Technology | Bipolar Transistors - BJT 100V 4W .5mA NPN Short-Lead Power BJT |
товару немає в наявності |