2N6661 Microchip Technology

Description: MOSFET N-CH 90V 350MA TO39, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 24 V, Drain to Source Voltage (Vdss): 90 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-39, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 6.25W (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bag.