Технічний опис 2N6755 PHIL
Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk.
Інші пропозиції 2N6755
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2N6755 | Виробник : International Rectifier |
 Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 12A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk |
товару немає в наявності |