2N6763 IR/MOT

Description: POWER FIELD-EFFECT TRANSISTOR, N, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 150W, Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk.