2SD2195T100 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS NPN DARL 100V 2A MPT3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: MPT3
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Технічний опис 2SD2195T100 Rohm Semiconductor
Description: TRANS NPN DARL 100V 2A MPT3, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: MPT3, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Інші пропозиції 2SD2195T100
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2SD2195T100 | Виробник : Rohm Semiconductor |
Description: TRANS NPN DARL 100V 2A MPT3 Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: MPT3 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
товару немає в наявності |
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2SD2195T100 | Виробник : ROHM Semiconductor |
Darlington Transistors DARL NPN 100V 2A |
товару немає в наявності |