Технічний опис 2SK1888 SANYO
Description: 30A, 30V, 0.035ohm, N-Channel MO, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 18A, 10V, Power Dissipation (Max): 2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-220ML, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V.
Інші пропозиції 2SK1888
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
2SK1888 | Sanyo |
Description: 30A, 30V, 0.035ohm, N-Channel MO Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 18A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220ML Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SK1888 |
Виробник: Sanyo
Description: 30A, 30V, 0.035ohm, N-Channel MO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220ML
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: 30A, 30V, 0.035ohm, N-Channel MO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220ML
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.


