Технічний опис 2SK2740 ROHM
Description: MOSFET N-CH 600V 7A TO220FN, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FN, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V, Drain to Source Voltage (Vdss): 600 V.
Інші пропозиції 2SK2740
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
2SK2740 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A TO220FNVgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FN Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V Drain to Source Voltage (Vdss): 600 V |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SK2740 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FN
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FN
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 7A TO220FN
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FN
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
Drain to Source Voltage (Vdss): 600 V
товару немає в наявності
В кошику
од. на суму грн.



