2N2018 General Semiconductor
Виробник: General SemiconductorDescription: TRANS NPN 125V 1A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 6V @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 10V
Frequency - Transition: 2MHz
Supplier Device Package: TO-111
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 125 V
Power - Max: 20 W
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Технічний опис 2N2018 General Semiconductor
Description: TRANS NPN 125V 1A TO111, Packaging: Bulk, Package / Case: TO-111-4, Stud, Mounting Type: Stud Mount, Vce Saturation (Max) @ Ib, Ic: 6V @ 100mA, 1A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 10V, Frequency - Transition: 2MHz, Supplier Device Package: TO-111, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 125 V, Power - Max: 20 W.