688-20 Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 20KV 300MA
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20000 V
Voltage - Forward (Vf) (Max) @ If: 34 V @ 400 mA
Current - Reverse Leakage @ Vr: 2 µA @ 20000 V
Description: DIODE GEN PURP 20KV 300MA
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20000 V
Voltage - Forward (Vf) (Max) @ If: 34 V @ 400 mA
Current - Reverse Leakage @ Vr: 2 µA @ 20000 V
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Технічний опис 688-20 Microchip Technology
Description: DIODE GEN PURP 20KV 300MA, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 500 ns, Technology: Standard, Current - Average Rectified (Io): 300mA, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 20000 V, Voltage - Forward (Vf) (Max) @ If: 34 V @ 400 mA, Current - Reverse Leakage @ Vr: 2 µA @ 20000 V.