AO4437 ALPHA&OMEGA
Виробник: ALPHA&OMEGA
Transistor P-Channel MOSFET; 12V; 8V; 25mOhm; 11A; 3W; -55°C ~ 150°C; AO4437 TAO4437
кількість в упаковці: 25 шт
на замовлення 100 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 16.90 грн |
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Технічний опис AO4437 ALPHA&OMEGA
Description: MOSFET P-CH 12V 11A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції AO4437
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
AO4437 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 11A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 4.5V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| AO4437 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.