Технічний опис AO4622 ALPHA
Description: MOSFET N/P-CH 20V 8SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Rds On (Max) @ Id, Vgs: 23mOhm @ 7.3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V, Drain to Source Voltage (Vdss): 20V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount.
Інші пропозиції AO4622
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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AO4622 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N/P-CH 20V 8SOICPackage / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 7.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Drain to Source Voltage (Vdss): 20V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount |
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| AO4622 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 20V 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Description: MOSFET N/P-CH 20V 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.