Технічний опис AO4821L AOSMD
Description: MOSFET 2P-CH 12V 9A 8SOIC, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 850mV @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 9A, Drain to Source Voltage (Vdss): 12V, Power - Max: 2W.
Інші пропозиції AO4821L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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AO4821L | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET 2P-CH 12V 9A 8SOICTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 850mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V Current - Continuous Drain (Id) @ 25°C: 9A Drain to Source Voltage (Vdss): 12V Power - Max: 2W |
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В кошику од. на суму грн. |
| AO4821L |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 12V 9A 8SOIC
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 850mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
Description: MOSFET 2P-CH 12V 9A 8SOIC
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 850mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
товару немає в наявності
В кошику
од. на суму грн.