AO8822 ALPHA&OMEGA
Виробник: ALPHA&OMEGA
Trans MOSFET N-CH 20V 7A 8-Pin TSSOP AO8822 TAO8822
кількість в упаковці: 25 шт
на замовлення 100 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 15.01 грн |
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Технічний опис AO8822 ALPHA&OMEGA
Description: MOSFET 2N-CH 20V 7A 8TSSOP, Part Status: Not For New Designs, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 7A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції AO8822
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
AO8822 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 7A 8TSSOP Part Status: Not For New Designs Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 20V Power - Max: 1.5W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
AO8822 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 7A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. |
 |
AO8822 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.5A; 960mW; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Power dissipation: 0.96W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhancement Semiconductor structure: common drain |
товару немає в наявності |
В кошику од. на суму грн. |
| AO8822 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 7A 8TSSOP
Part Status: Not For New Designs
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 7A 8TSSOP
Part Status: Not For New Designs
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| AO8822 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Description: MOSFET 2N-CH 20V 7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| AO8822 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.5A; 960mW; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 0.96W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.5A; 960mW; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 0.96W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Semiconductor structure: common drain
товару немає в наявності
В кошику
од. на суму грн.