AOP610 м/с
Код товару: 94661
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8542 39 90 00
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Інші пропозиції AOP610 м/с
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
AOP610 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N/P-CH 30V 8PDIPSupplier Device Package: 8-PDIP Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Drain to Source Voltage (Vdss): 30V Power - Max: 2.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube Configuration: N and P-Channel |
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| AOP610 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8PDIP
Supplier Device Package: 8-PDIP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Configuration: N and P-Channel
Description: MOSFET N/P-CH 30V 8PDIP
Supplier Device Package: 8-PDIP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Configuration: N and P-Channel
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од. на суму грн.