APT58M80J Microchip Technology
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 60A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Технічний опис APT58M80J Microchip Technology
Description: MOSFET N-CH 800V 60A SOT227, Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227, Vgs(th) (Max) @ Id: 5V @ 5mA, Power Dissipation (Max): 960W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Інші пропозиції APT58M80J
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT58M80J | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules FG, MOSFET, 800V, SOT-227 |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |