AUIRFR2607Z Infineon / IR


auirfr2607z-1385577.pdf
Виробник: Infineon / IR
MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms
на замовлення 3858 шт:

термін постачання 21-30 дні (днів)
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Технічний опис AUIRFR2607Z Infineon / IR

Description: MOSFET N-CH 75V 42A DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 4V @ 50µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V.

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AUIRFR2607Z AUIRFR2607Z Infineon Technologies auirfr2607z.pdf?fileId=5546d462533600a4015355b217bc146a Description: MOSFET N-CH 75V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
товару немає в наявності
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AUIRFR2607Z auirfr2607z.pdf?fileId=5546d462533600a4015355b217bc146a
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
товару немає в наявності
В кошику  од. на суму  грн.