BC856BWE6327 Infineon Technologies
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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Технічний опис BC856BWE6327 Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 65 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: PG-SOT323-3-1, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.