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BCR135TE6327 INFINEON

INFNS11572-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON
07+
на замовлення 6010 шт:
термін постачання 14-28 дні (днів)
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Технічний опис BCR135TE6327 INFINEON

Description: TRANS PREBIAS NPN 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Supplier Device Package: PG-SC75-3D, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Resistors Included: R1 and R2.

Інші пропозиції BCR135TE6327

Фото Назва Виробник Інформація Доступність Ціна
BCR135TE6327 Infineon Technologies INFNS11572-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-11
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BCR 135T E6327 BCR 135T E6327 Infineon Technologies BCR135%20Series.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
BCR135TE6327 INFNS11572-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-11
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BCR 135T E6327 BCR135%20Series.pdf
BCR 135T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.