Технічний опис BD537 STM
Description: TRANS NPN 80V 8A TO-220, Power - Max: 50 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 8 A, Part Status: Obsolete, Supplier Device Package: TO-220, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 2V, Current - Collector Cutoff (Max): 100µA, Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції BD537
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BD537 | STMicroelectronics |
 Description: TRANS NPN 80V 8A TO-220Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 8 A Part Status: Obsolete Supplier Device Package: TO-220 DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 2V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| BD537 | onsemi / Fairchild |
Bipolar Transistors - BJT |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
BD537 | STMicroelectronics |
Bipolar Transistors - BJT NPN General Purpose |
товару немає в наявності |
В кошику од. на суму грн. |
| BD537 |
|
Виробник: STMicroelectronics
Description: TRANS NPN 80V 8A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 80V 8A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BD537 |
|
Виробник: onsemi / Fairchild
Bipolar Transistors - BJT
Bipolar Transistors - BJT
товару немає в наявності
В кошику
од. на суму грн.
| BD537 |
|
Виробник: STMicroelectronics
Bipolar Transistors - BJT NPN General Purpose
Bipolar Transistors - BJT NPN General Purpose
товару немає в наявності
В кошику
од. на суму грн.