Технічний опис BFM520,115 NXP
Description: RF TRANS 2 NPN 8V 9GHZ 6-TSSOP, Part Status: Obsolete, Supplier Device Package: 6-TSSOP, Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz, Frequency - Transition: 9GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V, Voltage - Collector Emitter Breakdown (Max): 8V, Current - Collector (Ic) (Max): 70mA, Power - Max: 1W, Operating Temperature: 175°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції BFM520,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BFM520,115 | Виробник : NXP USA Inc. |
 Description: RF TRANS 2 NPN 8V 9GHZ 6-TSSOPPart Status: Obsolete Supplier Device Package: 6-TSSOP Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Frequency - Transition: 9GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Voltage - Collector Emitter Breakdown (Max): 8V Current - Collector (Ic) (Max): 70mA Power - Max: 1W Operating Temperature: 175°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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BFM520,115 | Виробник : NXP USA Inc. |
Description: RF TRANS 2 NPN 8V 9GHZ 6-TSSOP Part Status: Obsolete Supplier Device Package: 6-TSSOP Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Frequency - Transition: 9GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Voltage - Collector Emitter Breakdown (Max): 8V Current - Collector (Ic) (Max): 70mA Power - Max: 1W Operating Temperature: 175°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
товару немає в наявності |