Технічний опис BFP640FE6327 INFINEON
Description: RF TRANS NPN 4.5V 40GHZ 4-TSFP, Part Status: Obsolete, Supplier Device Package: 4-TSFP, Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz, Frequency - Transition: 40GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V, Voltage - Collector Emitter Breakdown (Max): 4.5V, Current - Collector (Ic) (Max): 50mA, Power - Max: 200mW, Gain: 23dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 4-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції BFP640FE6327
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BFP640FE6327 | Виробник : Infineon Technologies |
 Description: RF TRANS NPN 4.5V 40GHZ 4-TSFPPart Status: Obsolete Supplier Device Package: 4-TSFP Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Frequency - Transition: 40GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Voltage - Collector Emitter Breakdown (Max): 4.5V Current - Collector (Ic) (Max): 50mA Power - Max: 200mW Gain: 23dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
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BFP640FE6327 | Виробник : Infineon Technologies |
Description: RF TRANS NPN 4.5V 40GHZ 4-TSFP Part Status: Obsolete Supplier Device Package: 4-TSFP Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Frequency - Transition: 40GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Voltage - Collector Emitter Breakdown (Max): 4.5V Current - Collector (Ic) (Max): 50mA Power - Max: 200mW Gain: 23dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |