Технічний опис BSC032N03S INF
Description: MOSFET N-CH 30V 23A/100A TDSON, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: PG-TDSON-8-1, Vgs(th) (Max) @ Id: 2V @ 70µA, Power Dissipation (Max): 2.8W (Ta), 78W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V.
Інші пропозиції BSC032N03S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BSC032N03S | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 23A/100A TDSONVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 2V @ 70µA Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Drain to Source Voltage (Vdss): 30 V |
товару немає в наявності |



