BSC118N10NS G Infineon Technologies

Description: BSC118N10 - 12V-300V N-CHANNEL P, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-1, Vgs(th) (Max) @ Id: 4V @ 70µA, Power Dissipation (Max): 114W (Tc), Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.