BSP125-L6327 Infineon

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-SOT223-4-21, Vgs(th) (Max) @ Id: 2.3V @ 94µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V, Current - Continuous Drain (Id) @ 25°C: 120mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: TO-261-4, TO-261AA, Packaging: Bulk, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.