BSS209PW INF

Description: MOSFET P-CH 20V 580MA SOT323-3, Input Capacitance (Ciss) (Max) @ Vds: 89.9 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.38 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Obsolete, Vgs(th) (Max) @ Id: 1.2V @ 3.5µA, Power Dissipation (Max): 520mW (Ta), Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 580mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Supplier Device Package: PG-SOT323.