DMN100-7-F Diodes Incorporated

Description: MOSFET N-CH 30V 1.1A SC59-3, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SC-59-3, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).