| Кількість | Ціна |
|---|---|
| 21+ | 16.28 грн |
| 34+ | 9.73 грн |
| 100+ | 5.22 грн |
| 500+ | 3.81 грн |
| 1000+ | 3.59 грн |
| 3000+ | 2.75 грн |
| 6000+ | 2.47 грн |
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Технічний опис DTA123YKAT146 ROHM Semiconductor
Description: TRANS PREBIAS PNP 200MW SMT3, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції DTA123YKAT146 за ціною від 5.53 грн до 21.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DTA123YKAT146 | Rohm Semiconductor |
 Description: TRANS PREBIAS PNP 200MW SMT3Resistor - Emitter Base (R2): 10 kOhms Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V |
на замовлення 865 шт: термін постачання 21-31 дні (днів) |
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| DTA123YKAT146 |
|
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW SMT3
Resistor - Emitter Base (R2): 10 kOhms
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: TRANS PREBIAS PNP 200MW SMT3
Resistor - Emitter Base (R2): 10 kOhms
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.41 грн |
| 19+ | 16.87 грн |
| 100+ | 8.96 грн |
| 500+ | 5.53 грн |