DTC114TE Shenzhen Slkormicro Semicon Co., Ltd.
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 100@1MA,5V 150MW 100MA 50V SOT-5
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
| Кількість | Ціна |
|---|---|
| 45+ | 7.12 грн |
| 68+ | 4.49 грн |
| 110+ | 2.78 грн |
| 500+ | 1.88 грн |
| 1000+ | 1.64 грн |
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Технічний опис DTC114TE Shenzhen Slkormicro Semicon Co., Ltd.
Description: 100@1MA,5V 150MW 100MA 50V SOT-5, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Supplier Device Package: SOT-523, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms.