Технічний опис ES1D-13 VISHAY
Description: DIODE GEN PURP 200V 1A SMA, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SMA, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Інші пропозиції ES1D-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
ES1D-13 | Виробник : Diodes Incorporated |
 Description: DIODE GEN PURP 200V 1A SMACurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
товару немає в наявності |
|
|
|
ES1D-13 | Виробник : Diodes Incorporated |
Description: DIODE GEN PURP 200V 1A SMA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |