Технічний опис FD6M016N03 Fairchil
Description: MOSFET 2N-CH 30V 80A EPM15, Supplier Device Package: EPM15, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V, Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 80A, Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Through Hole, Package / Case: EPM15, Packaging: Tube.
Інші пропозиції FD6M016N03
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
FD6M016N03 | Виробник : onsemi |
 Description: MOSFET 2N-CH 30V 80A EPM15Supplier Device Package: EPM15 Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V Current - Continuous Drain (Id) @ 25°C: 80A Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Through Hole Package / Case: EPM15 Packaging: Tube |
товару немає в наявності |