FDB8832 UMW

Description: MOSFET N-CH 30V 34A/80A TO263AB, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).