FDC6506P ONS/FAI

Description: MOSFET 2P-CH 30V 1.8A SSOT6, Part Status: Obsolete, Supplier Device Package: SuperSOT™-6, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 1.8A, Drain to Source Voltage (Vdss): 30V, Power - Max: 700mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).