Технічний опис FDD6670AS FAIRCHILD
Description: MOSFET N-CH 30V 76A TO252, Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 70W (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 13.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 76A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції FDD6670AS
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FDD6670AS | Виробник : onsemi |
Description: MOSFET N-CH 30V 76A TO252Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 70W (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 76A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |

