FDFME3N311ZT onsemi

Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Part Status: Active, Supplier Device Package: 6-UMLP (1.6x1.6), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 600mW (Ta), Rds On (Max) @ Id, Vgs: 299mOhm @ 1.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UFDFN Exposed Pad, Packaging: Bulk.