FDMS6681Z ON Semiconductor / Fairchild

Description: MOSFET P-CH 30V 21.1A/49A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 73W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).