| Кількість | Ціна |
|---|---|
| 4+ | 92.06 грн |
| 10+ | 83.51 грн |
| 100+ | 64.45 грн |
| 500+ | 59.91 грн |
| 1000+ | 54.40 грн |
| 2500+ | 35.40 грн |
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Технічний опис FDS4141 onsemi / Fairchild
Description: MOSFET P-CH 40V 10.8A 8SOIC, Rds On (Max) @ Id, Vgs: 13mOhm @ 10.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 5W (Ta).
Інші пропозиції FDS4141
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDS4141 | Виробник : onsemi |
 Description: MOSFET P-CH 40V 10.8A 8SOICRds On (Max) @ Id, Vgs: 13mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5W (Ta) |
товару немає в наявності |
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FDS4141 | Виробник : onsemi |
Description: MOSFET P-CH 40V 10.8A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |